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Hitachi S-8840 CD-SEM

Used Hitachi S-8840 CD-SEM for automated critical-dimension measurement on 150 mm and 200 mm wafers. Ask for configuration, condition and inspection.

Hitachi S-8840 CD-SEM EQUIPMENT IMAGE
Configuration Review Model and installed options
New / Used Supply Subject to project availability
Global Delivery Destination-based assessment
Technical RFQ Package and process matching

The Hitachi S-8840 is a critical-dimension scanning electron microscope developed for automated linewidth and feature-size measurement in semiconductor wafer processing. It combines low-voltage SEM imaging, wafer handling, alignment and measurement software in a production metrology platform.

The available equipment information identifies the S-8840 for 150 mm and 200 mm wafers. Published measurement performance includes a CD range of 0.1 to 10 µm and repeatability of 3σ ≤5 nm or ≤±1%, depending on the measured structure and operating conditions.

Hitachi S-8840 critical dimension SEM

Hitachi S-8840 Main Specifications

ManufacturerHitachi
ModelS-8840
Equipment TypeCritical-Dimension Scanning Electron Microscope
Supported Wafer Sizes150 mm and 200 mm
Compatible Wafer ThicknessApproximately 0.4–1.0 mm, according to the available listing
Wafer Cassette Capacity25 wafers per cassette
Published Image Resolution5 nm
CD Measurement Range0.1–10 µm
CD Repeatability3σ ≤5 nm or ≤±1%
SEM Magnification1,000× to 150,000×
Optical Microscope MagnificationApproximately 110×
Wafer HandlingCassette-to-cassette automatic wafer transfer and alignment
ConditionUsed semiconductor equipment
AvailabilitySubject to current stock, inspection and configuration confirmation

Key Equipment Features

  • Automated critical-dimension and linewidth measurement

  • Compatible with listed 150 mm and 200 mm wafer formats

  • Cassette-to-cassette automatic wafer handling

  • Automatic wafer alignment and X-Y stage positioning

  • Low-voltage SEM imaging for semiconductor structures

  • Integrated measurement, wafer-map and process-control software

Typical Applications

The Hitachi S-8840 may be used to measure photoresist lines, etched features, contact holes and other semiconductor structures requiring repeatable critical-dimension control.

Typical process-control positions may include after-development inspection, after-etch inspection and engineering analysis. Actual measurement performance depends on the feature material, charging behavior, edge contrast, recipe and calibration condition.

Used Equipment Configuration and Inspection

Before quotation, customers should confirm whether the machine is configured for 150 mm, 200 mm or both wafer formats. Cassette stations, wafer robot parts, chuck, alignment hardware and measurement recipes may differ between systems.

Important inspection points include the electron gun, electron column, apertures, detectors, vacuum system, wafer handler, X-Y stage, control computer, software license, calibration standards and current measurement repeatability.

Request Hitachi S-8840 Information

Contact our team to check the current availability of the used Hitachi S-8840. Please provide your wafer size, feature type, expected CD range, process-control application, destination country and installation schedule.

Contact us for equipment photos, wafer-handling configuration, inspection results and quotation.

Frequently Asked Questions

What does the Hitachi S-8840 measure?

The S-8840 measures semiconductor critical dimensions such as line width, spacing and feature size using scanning electron microscope images and automated measurement software.

What wafer sizes does the S-8840 support?

The available information lists compatibility with 150 mm and 200 mm wafers. The installed loader, cassette and chuck configuration should be confirmed.

What is the listed CD measurement range?

The published range is 0.1 to 10 µm. Suitability for a specific structure depends on image contrast, feature shape, material and the measurement recipe.

What should be tested before purchasing a used CD-SEM?

Recommended checks include vacuum performance, electron-beam stability, image resolution, wafer transfer, stage accuracy, autofocus, calibration and CD repeatability using a suitable reference sample.