The SEN 10GSD-A-160 is a high-current ion implantation system used for controlled doping of semiconductor wafers. The available equipment listing identifies the machine for both 150 mm and 200 mm wafer processing.
The system belongs to the established GSD family of production ion implanters. Its exact source, beamline, end station, wafer disk, implant-energy range and dopant-gas configuration must be confirmed from the individual used machine.
SEN 10GSD-A-160 Main Specifications
| Manufacturer | SEN / Sumitomo Eaton Nova |
|---|---|
| Model | 10GSD-A-160 |
| Equipment Type | High-Current Ion Implanter |
| Supported Wafer Sizes | 150 mm and 200 mm, according to the available equipment listing |
| Implant Current Class | High current |
| Implant Energy Range | Must be confirmed from the installed high-voltage and beamline configuration |
| Ion Source | Source type, source-head components and approved species must be verified |
| Wafer End Station | Installed disk, cooling and implant-angle configuration must be confirmed |
| Dose Control | Installed Faraday, dose controller and calibration status must be inspected |
| Process Gases | Gas box, MFCs, safety equipment and dopant lines vary by machine |
| Control System | Controller hardware, operating software and recipe database must be confirmed |
| Condition | Used semiconductor equipment |
| Availability | Subject to current stock, inspection and configuration confirmation |
Key Equipment Features
High-current semiconductor ion implantation
Listed compatibility with 150 mm and 200 mm wafers
Beam generation, mass analysis and controlled acceleration
Batch or disk-based wafer processing depending on installed end station
Closed-loop dose monitoring and recipe-controlled operation
Configuration-dependent wafer cooling and angle control
Typical Applications
The 10GSD-A-160 may be used for high-dose doping processes in established silicon-device production. Potential applications include source and drain implants and other processes in which high beam current improves productivity.
The required dopant species, dose, implant energy and wafer temperature must be matched to the installed source, beamline, disk, cooling system and contamination history.
Used Equipment Configuration and Inspection
Public information confirms the model, equipment category and supported wafer sizes but does not establish the detailed configuration of the available machine. Numeric energy or beam-current specifications should be taken from the machine documentation rather than inferred from the model designation.
Inspection should cover the ion source, source power supplies, extraction assembly, analyzing magnet, acceleration section, wafer disk, dose controller, cooling system, vacuum pumps, gas cabinets, robots, safety interlocks and software.
Request SEN 10GSD-A-160 Information
Contact our team to check the current availability of the used SEN 10GSD-A-160. Please provide your wafer diameter, dopant species, required energy and dose ranges, intended device process and destination facility.
Contact us for equipment photos, serial number, source and beamline configuration, inspection status and quotation.
Frequently Asked Questions
What type of ion implanter is the SEN 10GSD-A-160?
It is identified in the available listing as a high-current semiconductor ion implanter.
Does the 10GSD-A-160 support 200 mm wafers?
The source listing identifies both 150 mm and 200 mm wafer capability. The installed end station and wafer-handling parts must be confirmed.
Does the model name confirm a specific implant energy?
No. The exact energy range should be verified from the installed power supplies, beamline, equipment manuals and process records.
Can the machine run an existing implant recipe?
Recipe transfer depends on the source, dopant gas, energy range, beam current, disk, cooling, dose-control calibration and software configuration of the available machine.
